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 Expert  723141

Expert in Semiconductor Materials Characterization Thin Film Deposition

Available for your Consulting and Expert Witness Needs

New York (NY)
Education Work History Career AccomplishmentsPublicationsConsulting Services Expert Witness

Summary of Expertise:

Listed with other top experts in: 

He has extensive experience, over 20 yrs, in the field of epitaxial deposition of III-V semiconductor materials for opto-electronic devices (InGaAsP/InGaAlAs/InP and AlGaAs/InGaP/GaAs based materials). This includes the growth of high-speed bipolar transitors, phototransistors, lasers, pin and avalanche high-speed photodetectors. He has operated a variety of commercial equipment including MBE systems from Vacuum Generators, Varian, and Riber and MOCVD systems from Aixtron. He has experience with many types of sources including standard effusion cells, solid and gas source crackers. In addition to these commercial systems he also has designed and built a compact gas source MBE system for the growth of InP based III-V materials. Much of his work relating to epitaxial growth has been published in peer-reviewed journals such as the Journal of Crystal Growth and Applied Physics Letters. He was one of the first researchers to develop the use of carbontetrabromide for carbon p-type doping in InGaAs materials that has been essential for the development and reliability of high-speed bipolar transistors.

epitaxial reactor

He has over 25 years of experience with vacuum systems from basic rough pumped deposition chambers to ultrahigh vacuum all metal sealed systems reaching base vacuum pressures of 1x10-11 torr. In the course of his research he has acquired extensive expertise with many types of pumping systems including Oil & Mercury Diffusion, Turbo, Ion, Cryo, Sublimation, Roots Blowers, Rotary vane, Scroll, Diaphragm, and Venturi pumps. This also includes extensive work with various vacuum measurement techniques such as Ion, Cold cathode, Manometers, Strain, Pirani, and RGA. In the course of his research he has designed, built, and operated vacuum systems for eptitaxial and thin film deposition of state of the art opto-electornic materials and high temperature, high vacuum in-situ x-ray analysis. These systems required the use of many different high temperature materials (e.g. aluminum oxide, pyrolitic boron nitride, tantulum, molybdenum, and tungsten) compatible with a high temperature and high vacuum environment. He has worked with many different vacuum deposition techniques, which include thermal (both resistive and e-beam), sputtering, PECVD, MBE, and MOCVD. He has worked with numerous systems requiring the pumping of toxic and flammable gasses such as phosphine, arsine, silane, hydrogen, oxygen, and pyrophroric metalorganics and has acquired extensive experience with all of the associated safety issues in the use of these hazardous gasses including storage, monitoring, personal protective equipment such as SCBA's, emergency response procedures, and waste removal requirements and procedures.

vacuum system


high vacuum system


ultra-high vacuum system


vacuum environment

He has many years of experience in the field of x-ray diffraction starting from his thesis work in dynamical x-ray diffraction in fulfillment of a Master Degree from the Polytechnic Institute of New York. He has experience with numerous diffraction techniques including powder, back reflection Laue, high resolution single crystal, double crystal, dynamical and energy dispersive techniques using both sealed tube and rotating anode x-ray sources. In the course of his research he has investigated many different materials including but not limited to various thin film metal contacts, silicides, oxides, superconductors, and III-V semiconductors. He has designed and built numerous custom x-ray systems for the study of both thin film and single crystal structures. The results of these studies have been published in peer-reviewed journals such as JAP and APL. He has developed various C based software applications utilizing Fourier analysis to simulate x-ray diffraction data and extract structural parameters.

X-ray diffraction analysis

Show Secondary and Basic Areas of Expertise
Expert may consult nationally and internationally, and is also local to the following cities: New York, New York;  Yonkers, New York;  Newark, New Jersey;  Jersey City, New Jersey;  Paterson, New Jersey;  Elizabeth, New Jersey;  Bridgeport, Connecticut;  New Haven, Connecticut;  Stamford, Connecticut;  and Philadelphia, Pennsylvania.

Year   Degree   Subject   Institution  
1979   MS   Physics   Polytechnic Institure of New York  
1977   BS   Physics   Polytechnic Institute of New York  

Work History:
Years   Employer   Department   Title   Responsibilities

2001 to




Growth and Characterization


Member of Technical Sales


He manages a production MOCVD reactor for the development & production of optical devices (lasers and detectors) for telecom applications. This includes all aspects of system operation and coordination between various projects. He is responsible for the materials development and mask design for various foundry and government contracts. He also handles all purchasing for the Growth & Characterization grouup. He managed the design and construction of a new 10,000ft2 semiconductor clean room facility for III-V growth and processing, including all hazardous gas safety systems, chemical waste treatment systems, compliance with local and national fire and safety codes, and installation of all growth and characterization equiqment. Responsible for coordinating with general contractor from initial concept to commisioning/certification of clean room.

1982 to 2001


Lucent Technologies/AT&T Bell Labs


Physical Sciences Research


Member of Technical Staff


He carried out research and development in advanced semiconductor opto-electronic devices and processing of semiconductor materials. He published many papers in peer reviewed journals and given presentations at numerious industry conferences. He was responsible for managing the epitaxial growth program for the development of high speed Indium Phosphide based materials/devices using the Molecular Beam Epitaxy growth method. Managed and coordinated development lab for thin film deposition of various metals, metal oxides, oxides, and carbon films using e-beam, sputter,and thermal deposition techniques. He has designed and built a variety of UHV compatible high temperature cells used in various film deposition applications. He developed a number of Fortran and C based software applications utilizing Fourier analysis to simulate x-ray diffraction data and extract structural parameters.

1978 to 1982


AT&T Bell Labs


Physical Sciences Reasearch


Senior Technical Associate


He was responsible for the operation of a research and development thin film deposition lab. This included the designing, construction, and operation various thin film deposition systems including e-beam, thermal, and sputter systems. He has worked with the deposition of many different materials systems including Au-Al, Cu-Al, PbO, and type A15 superconductors.

Career Accomplishments:


Publications and Patents Summary

He has more than 50 publications and 6 patents

Selected Publications and Publishers  
 - Electrochemical Society, State-of-the-Art Program on Compound Semiconductors  
 - Elsevier/Journal of Crystal Growth  
 - American Vacuum Society/The Journal of Vacuum Science and Technology  
 - American Institute of Physics/ Appl. Phys. Lett  
 - American Institute of Physics/ Appl. Phys. Lett.  

Government Experience:
Years   Agency   Role   Description
2001 to   DARPA   Team member   New materials and device development for DARPA contract.

Consulting Services:
Selected Consulting Examples:
  • He provides consulting services for the High Speed Electronics group at Bell Labs, Murray Hill, NJ. This includes consulting on new epitaxial growth techniques and materials for high speed InP based electronics. He also provides support for upgrading and maintaining their semiconductor growth system which includes the vacuum system, toxic gas handling, safety and control systems.
Recent Client Requests:
  • Expert for consulting on compressor blade hardning - gas turbine engines.
  • Expert for consulting on Die attach of Bipolar Transistor using AuSn versus AuSi.
Click the green button above to contact Expert for a free initial screening call regarding your expert consulting needs.  Expert is available for consulting to corporate, legal and government clients.  Remember, your initial screening call to speak with Expert is free.

Expert Witness:
Click the green button above to contact Expert for a free initial screening call regarding expert testimony, litigation consulting and support, forensic services, or any related expert witness services.  A few litigation needs include product liability, personal injury, economic loss, intellectual property (patent, trademark, trade secret, copyright), and insurance matters.  Remember, your initial screening call to speak with Expert is free.

Additional Skills and Services:
Supplier and Vendor Location and Selection

He was responsible for selecting a construction firm to build a 10,000 Sq Ft semiconductor clean room facility which is used for the growth and processing of state of the art semiconductor laser and detectors devices. Approximate budget was 5M. After putting together a general facility layout and a detailed equipment matrix with appropriate services he solicited bids from qualified vendors which were then reviewed. After presentations were given the firm best able to meet our needs was picked.


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