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 Expert  723539

Expert in Engineering and Physics of Photonics & Electronics technology.

Available for your Consulting and Expert Witness Needs

Education Work History Career AccomplishmentsPublicationsConsulting Services Expert Witness Market Research

Summary of Expertise:

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A major part of his career has been engaged in the technology of compound semiconductors, especially from the III-V family of semiconductors (using elements from group III and group V of the periodic table), which are of great interest for the high speed electronics and optical properties. These materials include Gallium Arsenide, Indium Phosphide, Gallium Phosphide and ternary combinations of these elements, sometimes also involving Aluminum. He has had hands-on experience in many aspects of compound semiconductor work, including materials growth (epitaxy etc), materials characterization, device processing, device analysis, materials analysis, diffusion processes, diffusion and epitaxy theory, and especially applications of compound semiconductors in telecom, consumer and other deployment sectors. He has managed and worked with teams involved in wider aspects of this work, and has chaired conferences on semi-insulating materials as well as Gallium Arsenide Integrated circuits. He has also taught University graduate courses on the subject.

compound semiconductor material


III-V semiconductor material

Heterojunction bipolar transistors exploit the physics of bandgap differences to enhance the characteristics of transistor performance. These involve choosing a material of narrower bandgap to create the base region, and this can be done conveniently using compound semiconducting materials. An example of a heterojunction bipolar transistor structure could use Gallium Aluminum Arsenide for the emitter material to enhance the carrier flow from base to emitter, accelerated by the electric field of the base (Gallium Arsenide) to emitter (GaAlAs) bandgap difference. He did early work on this topic with a PhD student in France, and when he moved to Canada was able to set in motion a programme that resulted in eventual deployment of HBT devices for high speed power and digital integrated circuits in new telecommunications products for use at 10Gb/s and beyond.

heterojunction bipolar transistor

Indium Phosphide (InP) is a compound semiconductor that has beneficial optical and electronic properties, in comparison to silicon for example. The great advantage of the InP family is the capability to make direct bandgap (efficient) light emitters at infrared wavelengths corresponding to the windows of transmission in optical fiber. So the conjunction of InP device technology with that of silica fiber has resulted in a revolution of telecommunications. Now the fruits of that technology wave are starting to diffuse into other application domains, such as biomedical diagnostics (using infrared light to do non-invasive testing through the skin for medical conditions etc). He has worked on many aspects of InP technology, from materials growth and diffusion through to device and integrated circuit manufacture. He also has strong knowledge of the physics of the compound semiconductor systems including InP.

indium phosphide

He has been involved in several aspects of photonics technology, ranging from materials and device fabrication to systems deployment and applications development. Photonics is the use of photons (light 'particles') to carry information or do work, analogous to the way we harness electrons to do tasks in electronics. Photonics offers extraordinarily large bandwidth for information transfer (hence the major interest in telecommunications deployment of photonics technology), and also has inherent assets by way of using wireless light beams, which in some cases can be used to penetrate materials or surfaces not accessible to electronic signals. In recent years he was involved in establishing a Centre for Photonics Research at the University of Ottawa, and also he was Director of the Canadian Photonics Consortium - an Industry Trade organisation encouraging and developing national and international opportunities in photonics.

photonics technology

During his work on new devices in Gallium Arsenide and Indium Phosphide, he acquired experience in many aspects of device operation, and necessarily in the analysis of device structures and their physical and chemical properties. This involved familiarity with measurement of device characteristics, behaviour and composition of underlying materials, troubleshooting failure mechanisms and reliability issues, and developing novel ways to access properties of material embedded deep within an operating device (for example the mobility of electrons within the active channel of a field effect transistor). He developed new approaches (for example Geometric Magnetoresistance) that could be applied directly to a microwave field effect transistor to determine the electron mobility underneath the 0.5 micron long gate electrode.

semiconductor device analysis

A special feature of two of the compound semiconductors (Gallium Arsenide and Indium Phosphide) is that they can be prepared to be very high in resistivity, which is a great advantage to substrates for the fabrication of high speed electronic and optical devices, because of the reduced losses involved. Since 1978 he has been heavily engaged in the industry-wide pursuit of improved semi-insulating substrates, seeking more stable and cost effective materials with the necessary properties. He started a conference series on this topic in 1980, bringing together Industry users and developers with Academic researchers, to enlarge the community communications across a topic involving many different disciplines. He ran the first conference in the UK, then assisted for many years, chairing a conference in Toronto ten years later. The same conference series continues to run in 2007. His knowledge in this field includes materials chemistry, growth and processing steps, device manufacture and substrate dependencies, as well as the many characterisation tools involved in understanding the substrate behaviour.

semi-insulating substrate

Vapour phase epitaxy (VPE) is a preferred method for deposition of thin oriented crystal films onto substrates. It is used extensively in the semiconductor industry, especially where high purity films with low structural defect counts are required and in some cases where different film compositions are needed in special structures. He has several years of hands-on experience growing InP and GaAs using trichloride transport VPE, and also has been involved with other types of VPE using Metal Organic Chemical Vapour Deposition (MOCVD). His work has included growing and characterising layers for field effect transistors, microwave diodes, Hall effect devices, optical detectors etc. He is familiar with the basic principles of epitaxial development under vapor growth conditions and has recently been consulting on the topic of carbon nanotube growth by VPE.

vapor-phase epitaxy

Gallium Arsenide (GaAs) is a binary semiconductor (synthesised using gallium and arsenic) that has advantageous properties in comparison to single element semiconductors, such as silicon or germanium. Chief among the assets of GaAs are high electron mobility (some 3-7 times faster than silicon) and the ability to make GaAs in a highly resistive form, providing excellent substrates for high speed devices, or means to electrically separate adjacent functions in a GaAs-based integrated circuit. This technology enabled a couple of generations of high speed transistors and circuits that propelled data rates in telecoms and wireless communications to new levels. Variants of GaAs, such as added aluminum (creating GaAlAs) gave us the laser used in CD players. He has been heavily involved in many aspects of this technology, from research and materials growth through to device and circuit manufacture, and commercial applications in systems (for telecom as well as military needs). He chaired the major international conference on GaAs Integrated Circuits in 1993, and has been invited to several NATO sponsored workshops on the future of Microelectronics. The experience obtained working on this field extends into other related areas involving similar combinations of engineering, physics and chemistry.

gallium arsenide

A major application of GaAs technology has been in the fabrication of high speed transistors for both digital and microwave applications. The high electron velocities of GaAs and InP materials enable their use in digital circuits running at 10Gb/s upto 100Gb/s and also for microwave devices from 900MHz up to 60GHz and beyond. He has been heavily involved in the technology and development of these devices, and his understanding of their operation also relates to other devices in III-V materials and to devices made in silicon and combined families.

microwave field-effect transistor

Show Secondary and Basic Areas of Expertise

Year   Degree   Subject   Institution   Honors
1972   B Sc   Physics   University of Nottingham   Honors (IIi)
1976   Ph D   Electronic Engineering (Semiconductors)   University of Nottingham  

Work History:
Years   Employer   Department   Title   Responsibilities

2005 to 2005


Canadian Photonics Consortium



Executive Director


Managing a not-for-profit organisation developing national/international opportunities for Photonics in Canada.

2002 to 2005


Intelligent Photonics Control Corp.



Chief Technology Officer


Involved in creation & strategic development of a 45 person start-up addressing optical device controls. IPR development, business development, developing links with Customers, Investors.

2000 to 2002


University of Ottawa


School of Information Technology & Engineering




Enabled creation of a Photonics Research Centre at U of O; recruited International Faculty Research Chairs. Developed & taught new grad course on technology of opto- and electronic devices for telecommunications.

1996 to 2000


Nortel Networks


Global External Research


Director, Global External Research


Managed Nortel-supported projects in Universities globally. >$15MUS budget across 350 projects with >100 Universities & Institutes.

1994 to 1996


Nortel Networks


Semiconductor Components Group


Director, Microwave Modules Group


Built up from prototyping (40 staff, 100 parts/week) to volume (120 staff, 6000 parts/wk) in 8 months. Enabled substantial growth of Nortel wireless business by supplying key technology.

1985 to 1994


Bell-Northern Research Ltd


Advanced Technology Lab


Manager/Sr Manager, IC & Module design


Led team developing GaAs IC and electro-optic module technology for 2.4-10Gb/s applications. Transferred designs & processes to Manufacturing division in Nortel. Spearheaded Heterojunction bipolar development for next gen electronics.

1980 to 1985


Thomson-CSF (now Thales), France.


Microwave Components Division and Central Research Laboratory


Manager, FET Device development; Micorwave ICs


Managed research projects to achieve stretch objectives on high speed transistors, and designed commercial components. Performed basic device research on microwave transistors. Developed fabrication technology for microwave ICs.

1977 to 1980


Plessey Research (Caswell) Ltd, (now Bookham)


Microwave Materials Group


Manager, Epitaxial Material Supply


Developed Characterisation & growth of GaAs and InP for microwave devices; managed supply to internal and external users.

Career Accomplishments:

Member IEEE (USA) Member UK Institute of Physics. Member British Printing Society.

Professional Appointments

IEEE GaAs IC Symposium Committee (1987-1993). Founder of Semi-Insulating III-V materials conference series. (1980-1990). 2001 Chair of Panel to review Photonics Research Ontario. 2001 Member of 6-person panel to review NATO Science for Peace programme (Europe). 1992-9 Science Advisory Board for National Optics Institute (Quebec)

Medical/Professional Internships

2000-2002 Human Ethics Research Board (Ottawa Heart Institute).

Publications and Patents Summary

He has over 50 published articles, mostly in various apects of III-V semiconductor electronics & materials. 8 invited papers. 9 patents awarded (of which 6 as sole inventor), plus 5 patents filed.

Selected Publications and Publishers  
 - Society of Photographic Instrumentation Engineers (SPIE)  
 - Semiconductor Research Corporation  
 - Semiconductor Device Research Symposium  
 - IEEE Transactions on Electron Devices, Institute of Electrical and Electronics Engineers (IEEE)  
 - Solid State Electronics  

Government Experience:
Years   Agency   Role   Description
1975 to 1977   UK Ministry of Defence   Research Assistant   He performed radiotracer diffusion and analysis of silver contacts to Indium Phosphie, for military microwave devices.

Consulting Services:
Selected Consulting Examples:
  • He researched, analysed and reported on the emerging market for Organic Light Emitting Diodes, for a Canadian Government Laboratory.
  • He reviewed a number of patents on electro-optic devices and provided recommendations on applications value.
  • He assembled the information and coordinated the submission of a successful proposal for Research Investments tax reimbursement for a small Ottawa Start-up company.
  • He prepared and facilitated a workshop on applications of photonics to biomedical needs, for an Industrial player considering expansion into that arena.
  • He assisted a small mature company in the preparation of a proposal submission for government subsidy of a project to explore use of Light Emitting Diodes in a medical device application.
Recent Client Requests:
  • Expert in USB applications for consulting on development of an over current protection device for USB applications.
Click the green button above to contact Expert for a free initial screening call regarding your expert consulting needs.  Expert is available for consulting to corporate, legal and government clients.  Remember, your initial screening call to speak with Expert is free.

Expert Witness:
Click the green button above to contact Expert for a free initial screening call regarding expert testimony, litigation consulting and support, forensic services, or any related expert witness services.  A few litigation needs include product liability, personal injury, economic loss, intellectual property (patent, trademark, trade secret, copyright), and insurance matters.  Remember, your initial screening call to speak with Expert is free.

International Experience:
Years   Country / Region   Summary
1975 to 1980   UK   Work for UK MoD, then Plessey (see above).
1980 to 1985   France   Work at French laboratories of Thomson-CSF (now Thales).
2001 to 2001   Eastern Europe   He was a member of a 6-person team assembled to evaluate the NATO Science for Peace programme (eg in Czech Republic, Slovakia, Slovenia, Russia, Ukraine, Brussels).
1984 to 1984   Japan   He was one of 5 foreign experts invited to participate in a Japanese MITI-sponsored Forum on Science & Technology, held at Oiso Resort.

Language Skills:
Foreign Language   Description
French   He lived and worked in France for 5 years, and is frequently complimented on his accent!

Market Research:
He has provided support to sales and marketing groups by using his technical background to understand technology capabilities, and articulate these into to possible product scenarios for customer applications.

Click the green button above to contact Expert for a free initial screening call regarding your marketing research, industry research, and company research needs.  For research needs involving multiple experts or secondary research, a Research Director can be assigned to coordinate the work into a custom report for you as a potentially quicker and more cost effective alternative to doing this work yourself or hiring a boutique consultancy.  Remember, your initial screening call to speak with Expert is free.

Additional Skills and Services:

He has delivered courses and presentations to classes at many levels from University Students to experienced professionals, and also intelligent lay groups (eg Canadian Members of Parliament). He has also facilitated workshops and discussions on photonics and other topics.

Other Skills and Services

He has also been involved in aspects of due diligence verification exercises for investors in technology companies.


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